| PART |
Description |
Maker |
| AM29LV400BB-90DTE1 AM29LV400BB-90DTI1 AM29LV400BT- |
256K X 16 FLASH 3V PROM, 80 ns, UUC43
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
http://
AMD[Advanced Micro Devices]
|
| AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16）单2.7伏电池电压⑩闪存
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| 79C0832XPQK-15 79C0832XPQK-20 79C0832RPQE-20 79C08 |
INDUCTOR SHIELDED 10UH SMD
8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 200 ns, QFP96
8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 150 ns, QFP96
|
Maxwell Technologies, Inc
|
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| PDM41028LA10TSOITR PDM41028LA10SOITR PDM41028LA12S |
1 Megabit Static RAM 256K x 4-Bit 1兆位静RAM 256K × 4
1 Megabit Static RAM 256K x 4-Bit 1兆位静态RAM 256K × 4
|
Electronic Theatre Controls, Inc.
|
| AM29F200AB-150EEB AM29F200AB-70FC AM29F200AB-90SEB |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
Dual Retriggerable Monostable Multivibrators 16-SSOP -40 to 85 128K X 16 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
|
Advanced Micro Devices, Inc.
http://
|
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| PM29F002T-70JC PM29F002T-90PC PM29F002T-55PC PM29F |
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位56K × 8.0伏，只有闪存的CMOS
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位256K × 8.0伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| AT49BV-LV002 AT49LV002T AT49BV002 AT49BV002N AT49B |
2-MEGABIT (256K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY
2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
|
ATMEL[ATMEL Corporation]
|
